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FGA20S120M 1200V, 20A Shorted-Anode IGBT
March 2010
FGA20S120M
1200V, 20A Shorted-Anode IGBT
Features
* High speed switching * Low saturation voltage: VCE(sat) =1.55V @ IC = 20A * High input impedance * RoHS compliant
tm
General Description
Using advanced Field Stop Trench and shorted-anode technology, Fairchild's 1200V Shorted-Anode Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is designed for Induction heating Microvewave Oven.
Applications
* Induction heating and Microvewave Oven * Soft switching Application
C
G
TO-3PN
GCE
E
Absolute Maximum Ratings T
Symbol
VCES VGES IC ICM (1) IF IF PD TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current
C
= 25C unless otherwise noted
Description
Ratings
1200 25 @ TC = 25oC @ TC = 100oC 40 20 60 @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 100oC
o
Units
V V A A A A A W W
o
Diode Continuous Forward Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
40 20 348 174 -55 to +175 -55 to +175 300
C C
o
oC
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Notes: 1: Limited by Tjmax
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
----
Max.
0.43 0.43 40
Units
o
C/W C/W
o
oC/W
(c)2010 Fairchild Semiconductor Corporation
1
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FGA20S120M Rev. A
FGA20S120M 1200V, 20A Shorted-Anode IGBT
Package Marking and Ordering Information
Device Marking
FGA20S120M
Device
FGA20S120M
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 2mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
1200 -
-
1 250
V mA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V, TC = 125oC IC = 20A, VGE = 15V, TC = 175oC VFM Diode Forward Voltage IF = 20A, TC = 25oC IF = 20A, TC = 175oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2680 53 43 ---pF pF pF 4.5 --6.0 1.55 1.75 1.85 1.7 2.1 7.5 1.85 2.2 V V V V V V
Switching Characcteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 20A, VGE = 15V VCC = 600V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 175oC VCC = 600V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC 43 176 310 320 0.52 1.43 1.95 41 260 345 520 0.78 1.97 2.75 210 18 119 480 2.145 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGA20S120M Rev. A
2
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FGA20S120M 1200V, 20A Shorted-Anode IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
140 120
Collector Current, IC [A]
TC = 25 C
o
Figure 2. Typical Output Characteristics
140
TC = 175 C
o
20V
17V 15V
20V
17V 15V
120
Collector Current, IC [A]
100 80 60 40
VGE = 6V 7V 10V 9V 8V 12V
100 80
12V
60 40 20 0 0.0
VGE = 6V 7V 10V 9V 8V
20 0 0.0
1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V]
9.0
1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V]
9.0
Figure 3. Typical Saturation Voltage Characteristics
140 120
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C
o
Figure 4. Transfer Characteristics
140
Common Emitter
120 VCE = 20V
TC = 25 C
o
100 80 60 40 20 0 0
TC = 175 C
o
Collector Current, IC [A]
o 100 TC = 175 C
80 60 40 20 0
1 2 3 4 5 Collector-Emitter Voltage, VCE [V]
6
0
3 6 9 12 Gate-Emitter Voltage,VGE [V]
15
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
3.0
Common Emitter VGE = 15V
2.5
40A
16
12
2.0
20A
8
20A
1.5
10A
4
IC = 10A
40A
1.0 25
50
75 100 125 150 o Case Temperature, TC [ C]
175
0
4
8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGA20S120M Rev. A
3
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FGA20S120M 1200V, 20A Shorted-Anode IGBT
Typical Performance Characteristics
Figure 7. Saturtio Voltage vs. VGE
20
Common Emitter TC = 175 C
o
Figure 8. Capacitance Characteristics
6000
Cies Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
4000
12
Coes
8
20A 40A
2000
Cres
4
IC = 10A
0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
1
10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate Charge Characteristics
15
Common Emitter TC = 25 C
o
Figure 10. SOA Characteristics
100
10s
Gate-Emitter Voltage, VGE [V]
Collector Current, Ic [A]
12
VCC = 200V
600V
10
100s
9
400V
1ms
1
10 ms DC
6
0.1
3
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
0 0 30 60 90 120 150 Gate Charge, Qg [nC] 180 210
0.01 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-On Characteristics vs. Gate resistance
200
Figure 12. Turn-Off Characteristics vs. Gate resistance
3000
tr
td(off)
1000
Switching Time [ns]
Switching Time [ns]
tf
100
td(on) Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 175 C
o o
100
Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 175 C
o o
10 0 10 20 30 40 50 Gate Resistance, RG [] 60 70
0
10
20
30
40
50
60
70
Gate Resistance, RG []
FGA20S120M Rev. A
4
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FGA20S120M 1200V, 20A Shorted-Anode IGBT
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs. Collector Current
3000
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
1000 800
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
1000
Switching Time [ns]
Switching Time [ns]
TC = 175 C
tr
600
TC = 175 C
100
td(on)
400
td(off)
tf
10 10
20
30
40
50
200 10
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate resistance
5000
Eoff
Figure 16. Switching Loss vs. Collector Current
5000
Eoff
Switching Loss [J]
Switching Loss [J]
1000
Eon
1000
Eon
Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 175 C
o o
Common Emitter VGE = 15V, RG = 10W
o TC = 25 C o TC = 175 C
100
0
10
20 30 40 50 Gate Resistance, RG []
60
70
100 10
20 30 40 Collector Current, IC [A]
50
Figure 17. Turn-Off Switching SOA Characteristics Collector Currrent
100
Figure 18. Forward Characteristics
30
10
Collector Current, IC [A]
Forward Current, IF [A]
TJ = 25 C
o
TJ = 175 C
o
10
1
Safe Operating Area
TC = 25 C TC = 175 C
o
o
1 1
VGE = 15V, TC = 175 C
o
10
100
1000
0.1 0.0
Collector-Emitter Voltage, VCE [V]
0.5 1.0 1.5 Forward Voltage, VF [V]
2.0
FGA20S120M Rev. A
5
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FGA20S120M 1200V, 20A Shorted-Anode IGBT
Figure 19. Transient Thermal Impedeance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.3 0.1 0.05 0.02
0.01
0.01 single pulse
PDM t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA20S120M Rev. A
6
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FGA20S120M 1200V, 20A Shorted-Anode IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FGA20S120M Rev. A
7
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FGA20S120M 1200V, 20A Shorted-Anode IGBT
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Rev. I45
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGA20S120M Rev. A
8
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